전자부품 데이터시트 검색엔진 |
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BF421 데이터시트(PDF) 2 Page - STMicroelectronics |
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BF421 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-amb • Rthj-Case • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max 150 50 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -200 V VCB = -200 V TC = 150 oC VCB = -300 V -10 -10 -100 nA µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = -5 V -50 nA V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -300 V V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -10 µA -300 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100 µA -5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -0.6 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -1.2 V hFE ∗ DC Current Gain IC = -25 mA VCE = -20 V 50 fT Transition Frequency IC = -10 mA VCE = -10 V f =100MHz 60 MHz CRE Reverse Capacitance IE = 0 VCB = -30 V f = 1MHz 1.6 pF ∗ Pulsed: Pulse duration ≤ 300 µs, duty cycle ≤ 2 % BF421 2/5 |
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