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4 / 17 page Electrical characteristics STGB10NC60HD - STGP10NC60HD - STGF10NC60HD 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage (VGE= 0) IC= 1mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125°C 1.9 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V ±100 nA gfs Forward transconductance VCE = 15V, IC= 5A 3.5 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 365 43 8.3 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 19) 19.2 4.5 7 nC nC nC |
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