STGW33IH120D datasheet(5/14 Pages) STMICROELECTRONICS

부품명	STGW33IH120D

상세설명	30 A - 1200 V - very fast IGBT

Download	14 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

5 / 14 page

STGW33IH120D

Electrical characteristics

5/14

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

46

10

1660

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

Tc= 125 °C (see Figure 17)

45

12

1500

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

102

284

180

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

Tc= 125 °C (see Figure 17)

200

424

316

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in

a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the

same temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

1.5

3.4

4.9

mJ

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

Tc= 125 °C (see Figure 17)

2.3

6.4

8.7

mJ

유사한 부품 번호 - STGW33IH120D

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGW30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed November 2016 Rev 3
	STGW30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed July 2014 Rev 2
	STGW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed July 2015 Rev 5
	STGW30M65DF2	726Kb / 19P	Trench gate field-stop IGBT, M series 650 V, 30 A low loss

More results

유사한 설명 - STGW33IH120D

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGW38IH120D	516Kb / 14P	30 A - 1200 V - very fast IGBT
	STGD3NC120H	899Kb / 13P	7 A, 1200 V very fast IGBT June 2012
	STGW35NC120HD	355Kb / 13P	35 A - 1200 V - very fast IGBT
	STGB20NC60V	407Kb / 16P	30 A - 600 V - very fast IGBT
	STGFW30NC60V	763Kb / 13P	30 A - 600 V - very fast IGBT April 2012 Rev 1
	STGB20NC60V	469Kb / 20P	30 A - 600 V - very fast IGBT Rev 6 June 2015
	STGB3NC120HD	769Kb / 16P	7 A, 1200 V very fast IGBT with ultrafast diode January 2011 Rev 4
	STGB10NC60HD	774Kb / 19P	600 V - 10 A - very fast IGBT
	STGW38IH130D	822Kb / 17P	33 A - 1300 V - very fast IGBT
	STGB19NC60H	663Kb / 15P	19 A - 600 V - very fast IGBT September 2009 Rev 4

More results

STGW33IH120D 데이터시트(PDF) 5 Page - STMicroelectronics

STGW33IH120D 데이터시트(HTML) 5 Page - STMicroelectronics

유사한 부품 번호 - STGW33IH120D

유사한 설명 - STGW33IH120D

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

데이터시트 다운로드

링크 URL