STGW35NC120HD datasheet(5/13 Pages) STMICROELECTRONICS

부품명	STGW35NC120HD

상세설명	35 A - 1200 V - very fast IGBT

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5 / 13 page

STGW35NC120HD

Electrical characteristics

5/13

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

29

11

1820

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

TC=125 °C (see Figure 17)

27

14

1580

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

90

275

312

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

TC=125 °C (see Figure 17)

150

336

592

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in

a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the

same temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

(see Figure 17)

1660

4438

6098

µJ

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 960 V, IC = 20 A

RG= 10 Ω, VGE= 15 V,

TC=125 °C (see Figure 17)

3015

6900

9915

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 20 A

IF = 20 A, TC = 125 °C

1.9

1.7

2.5

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 20 A, VR = 27 V,

TC=125 °C, di/dt = 100 A/µs

(see Figure 20)

152

722

9

ns

nC

A

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