STD3NC50 datasheet(1/7 Pages) STMICROELECTRONICS

부품명	STD3NC50

상세설명	N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

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STD3NC50

N - CHANNEL 500V - 2.4

Ω - 3A TO-251/TO-252

PowerMESH

™ ΙΙ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 2.4

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL.

DESCRIPTION

The PowerMESH

™ ΙΙ is the evolution of the first

generation of MESH OVERLAY

™ . The layout

refinements

introduced

greatly

improve

the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

500

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC3.2

A

ID

Drain Current (continuous) at Tc =100

oC2

A

IDM (

•)

Drain Current (pulsed)

12.8

A

Ptot

T otal Dissipation at Tc =25

oC60

W

Derating Factor

0.48

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤3 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST D3NC50

500 V

< 2.7

Ω

3A

1

3

DPAK

TO-252

(Suffix ”T4”)

January 2000

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1/7

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