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STD4NC50 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STD4NC50
상세설명  N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD4NC50 데이터시트(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj -amb
Rthc-sink
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
2.5
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
500
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
50
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =1.9 A
1.3
1. 5
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
3. 7
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =1.9 A
3
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
700
85
9
pF
pF
pF
STD4NC50
2/8


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