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STD83003 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STD83003
상세설명  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD83003 데이터시트(HTML) 1 Page - STMicroelectronics

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STD83003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD93003, its
complementary PNP transistor.
®
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage
(IC = 0,
IB = 0.75 A,
tp < 10
µs, Tj < 150oC)
V(BR)EBO
V
IC
Collector Current
1.5
A
ICM
Collector Peak Current (tp < 5 ms)
3
A
IB
Base Current
0.75
A
IBM
Base Peak Current (tp < 5 ms)
1.5
A
Ptot
Total Dissipation at Tc = 25
o C20
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/8


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