STGB10N60L datasheet(2/8 Pages) STMICROELECTRONICS

부품명	STGB10N60L

상세설명	N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

T yp

1.2

62. 5

0.1

oC/W

ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VBR(ces)

Collector-Emitt er

Breakdown Voltage

IC =250

µAVGE = 0

600

V

ICES

Collector cut-of f

(VGE =0)

VCE =Max Rating

Tj =25

oC

VCE =Max Rat ing

Tj =125

oC

25

100

µA

IGES

Gat e-Emitter Leakage

Current (VCE =0)

VGE =

± 15 V

VCE =0

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGE(th)

Gat e Threshold

Voltage

VCE =VGE

IC = 250

µA

VCE =VGE

IC =250

µATj =25 oC

0. 6

1. 0

2. 4

2. 0

V

VCE(SAT )

Collector-Emitt er

Sat uration Voltage

VGE =4.5 V

IC =8 A

Tj =- 40

oC

VGE =4.5 V

IC =9.5 A Tj =25

oC

VGE =4.5 V

IC =8 A

Tj = 150

oC

1.5

1.4

1.25

2. 0

V

IC

Collector Current

VGE =4.5 V

VCE =7 V

15

45

A

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs

Forward

Transconductance

VCE =25 V

IC =8 A

Tj =25

oC7

12

S

Cies

Coes

Cres

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VCE = 25V

f = 1MHz

VGE = 0

1800

120

19

2600

165

26

pF

QG

Gat e Charge

VCE = 400 V

IC =8 A

VGE =5 V

30

nC

FUNCTIONAL CHARACTERISTICS

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICL

Lat ching Current

Vclamp = 480 V

dV/ dt = 200 V/

µs

Tj = 125

oC

20

A

ECF

Forward Clamping

Energy

Tstart =55

oCV

cl amp =4 80 V

IC = 10 A

L = 4.2 mH - Single Pulse

210

mJ

EAR

Reverse Avalanche

Energy

10

mJ

STGB10N60L

2/8

유사한 부품 번호 - STGB10N60L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGB10NB37LZ	92Kb / 8P	N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
	STGB10NB37LZ	445Kb / 10P	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
	STGB10NB37LZ	751Kb / 15P	10 A - 410 V internally clamped IGBT Rev 4 Novermber 2009
	STGB10NB37LZT4	751Kb / 15P	10 A - 410 V internally clamped IGBT Rev 4 Novermber 2009
	STGB10NB37LZ	445Kb / 10P	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT

More results

유사한 설명 - STGB10N60L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGP10N60L	88Kb / 8P	N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
ON Semiconductor	NGTB10N60R2DT4G	531Kb / 7P	IGBT 600V, 10A, N-Channel January 2015 - Rev. 2
STMicroelectronics	STGB10NC60HD	453Kb / 15P	N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
	STGP10NB60S	387Kb / 13P	N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
	STGB10NC60HD_0710	410Kb / 17P	N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT
	STGB3NB60SD	336Kb / 8P	N-CHANNEL 3A - 600V D2PAK Power MESH??IGBT
Fairchild Semiconductor	FGD2N40L	224Kb / 6P	400V N-Channel Logic Level IGBT
STMicroelectronics	STGB10NB37LZ	92Kb / 8P	N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
	STGP10NC60KD	379Kb / 17P	N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT
	STGB10NC60K	599Kb / 17P	N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

More results

STGB10N60L 데이터시트(PDF) 2 Page - STMicroelectronics

STGB10N60L 데이터시트(HTML) 2 Page - STMicroelectronics

유사한 부품 번호 - STGB10N60L

유사한 설명 - STGB10N60L

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