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STGW50NB60M 데이터시트(PDF) 1 Page - STMicroelectronics |
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STGW50NB60M 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 May 2003 STGW50NB60M N-CHANNEL 50A - 600V -TO-247 PowerMESH™ IGBT (q ) Pulse width limited by safe operating area s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) s LOW ON-VOLTAGE DROP (VCESAT) s LOW GATE CHARGE s HIGH CURRENT CAPABILITY DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz. APPLICATIONS s MOTOR CONTROL s WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS TYPE VCES VCE(sat)(25°C) IC STGW50NB60M 600 V < 1.9 V50 A Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS =0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC =25°C 100 A IC Collector Current (continuous) at TC =100°C 50 A ICM ( ) Collector Current (pulsed) 400 A PTOT Total Dissipation at TC = 25°C 250 W Derating Factor 2 W/°C Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-247 1 2 3 INTERNAL SCHEMATIC DIAGRAM |
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