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STP17NK40ZFP 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 10 page 3/10 STP17NK40Z - STP17NK40ZFP ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 400 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 7.5 A 0.23 0.25 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V, ID = 7.5 A 10.6 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1900 271 63 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 175 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 200 V, ID = 7.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 25 23 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 320 V, ID = 15 A, VGS = 10 V 65 13 35 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 200 V, ID = 7.5 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 55 13 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 320 V, ID = 15 A, RG =4.7Ω, VGS = 10 V (Inductive Load see, Figure 5) 12 13 25 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 15 60 A A VSD (1) Forward On Voltage ISD = 15 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 332 2650 16 ns nC A |
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