STP21N05LFI datasheet(2/10 Pages) STMICROELECTRONICS

부품명	STP21N05LFI

상세설명	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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THERMAL DATA

TO-220

ISOWATT220

Rthj-case

Thermal Resist ance Junct ion-case

Max

1.88

4. 29

oC/W

Rthj-amb

Rthc- sink

Tl

Thermal Resist ance Junct ion-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Uni t

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

21

A

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =25 V)

80

mJ

EAR

Repet itive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

20

mJ

IAR

Avalanche Current, Repetitive or Not-Repetitive

(T c = 100

oC, pulse width limited by Tj max,

δ <1%)

14

A

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

50

V

IDS S

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

oC

250

1000

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 15 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =250

µA1

1.6

2.5

V

RDS(on)

St atic Drain-source On

Resist ance

VGS =5 V

ID = 10.5 A

VGS =5 V

ID =10.5 A

Tc = 100

oC

0. 065

0.085

0. 17

Ω

ID(on)

On St ate Drain Current

VDS >ID(on) xRD S(on)max

VGS =10 V

21

A

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRD S(on)max

ID = 10.5 A

6

15

S

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS =0

700

250

70

1000

350

100

pF

STP21N05L/FI

2/10

유사한 부품 번호 - STP21N05LFI

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP21N06L	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics	STP21N06LFI	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

More results

유사한 설명 - STP21N05LFI

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STK12N05L	180Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD12N05L	176Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP50N06L	199Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP55N06L	213Kb / 7P	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD17N05L	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD8N10L	381Kb / 9P	N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STD15N06L	140Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP20N10L	203Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP21N06L	197Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
	STP19N06L	142Kb / 7P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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STP21N05LFI 데이터시트(PDF) 2 Page - STMicroelectronics

STP21N05LFI 데이터시트(HTML) 2 Page - STMicroelectronics

유사한 부품 번호 - STP21N05LFI

유사한 설명 - STP21N05LFI

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