STP22NE03L datasheet(3/5 Pages) STMICROELECTRONICS

부품명	STP22NE03L

상세설명	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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3 / 5 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 15 V

ID = 11 A

RG =4.7

Ω

VGS = 5 V

15

70

20

100

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 24 V

ID = 22 A

VGS = 5 V

13

6

18

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 24 V

ID = 22 A

RG =4.7

Ω VGS = 5 V

13

33

55

18

46

77

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

22

88

A

VSD (

∗)

Forward On Voltage

ISD = 22 A

VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 22 A

di/dt = 100 A/

µs

VDD = 15 V

Tj = 150

oC

40

44

2.2

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STP22NE03L

3/5

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