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FCA16N60 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FCA16N60 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 REV. A2 SuperFET TM August 2007 FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features •650V @TJ = 150°C • Typ. Rds(on)=0.22 Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Absolute Maximum Ratings Thermal Characteristics TO-3P FCA Series GS D D G S Symbol Parameter FCA16N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 16 10.1 A A IDM Drain Current - Pulsed (Note 1) 48 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 167 1.33 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCA16N60 Unit RθJC Thermal Resistance, Junction-to-Case 0.75 °C/W RθJA Thermal Resistance, Junction-to-Ambient 41.7 °C/W *Drain current limited by maximum junction temperature |
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