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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDD6N20 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDD6N20 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
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4 / 9 page  FDD6N20 / FDU6N20 Rev. A www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *Notes: 1. VGS = 0V 2. ID = 250μA TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *Notes: 1. VGS = 10V 2. ID = 2.3A TJ, Junction Temperature [ oC] 25 50 75 100 125 150 0 1 2 3 4 5 TC, Case Temperature [ oC] 110 100 0.01 0.1 1 10 20μs 100μs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 400 DC 50 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *Notes: 1. ZθJC(t) = 3.1 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] 5 t1 PDM t2 |
유사한 부품 번호 - FDD6N20 |
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유사한 설명 - FDD6N20 |
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