6

www.fairchildsemi.com

FDS6990AS Rev. A1

SyncFET Schottky Body Diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in paral-

lel with PowerTrench MOSFET. This diode exhibits similar char-

acteristics to a discrete external Schottky diode in parallel with a

MOSFET. Figure 12 shows the reverse recovery characteristic

of the FDS6990AS.

Figure 12. FDS6990AS SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an equivalent size

MOSFET produced without SyncFET (FDS6990A).

Figure 13. Non-SyncFET (FDS6990A) body

diode reverse recovery characteristic.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 14. SyncFET body diode reverse leakage

versus drain-source voltage and temperature.

12.5nS/Div

12.5nS/Div

0.000001

0.00001

0.0001

0.001

0.01

0.1

05

10

15

20

25

30

V

T

T

T