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FDS6990AS 데이터시트(PDF) 6 Page - Fairchild Semiconductor |
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FDS6990AS 데이터시트(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page 6 www.fairchildsemi.com FDS6990AS Rev. A1 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in paral- lel with PowerTrench MOSFET. This diode exhibits similar char- acteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990AS. Figure 12. FDS6990AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A). Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 12.5nS/Div 12.5nS/Div 0.000001 0.00001 0.0001 0.001 0.01 0.1 05 10 15 20 25 30 V DS, REVERSE VOLTAGE (V) T A = 125° C T A = 25° C T A = 100° C |
유사한 부품 번호 - FDS6990AS_08 |
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유사한 설명 - FDS6990AS_08 |
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