전자부품 데이터시트 검색엔진 |
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ST3237EB 데이터시트(PDF) 11 Page - STMicroelectronics |
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ST3237EB 데이터시트(HTML) 11 Page - STMicroelectronics |
11 / 18 page ST3237EB Application note 11/18 The second model is IEC 1000-4-2 and is used to simulate the reaction of the device on equipment when subjected to electrostatic discharges, which may occur from personnel to objects near vital instrumentation. Direct (Contact) and indirect (Air Gap) applications of discharges to the equipment under test (EUT) are possible. Test characteristics are shown in circuit, waveform and table below. Figure 9. IEC 1000-4-2 circuit Figure 10. IEC 1000-4-2 current waveform Table 11. Characteristics of the ESD generator Level Indicated voltage First peak current of discharge (± 10%) Rise time with discharge switch Current at 30 ns (± 30%) Current at 60 ns (± 30%) 1 2 kV 7.5 A 0.7 to 1ns 4 A 2 A 2 4 kV 15 A 0.7 to 1ns 8 A 4 A 3 6 kV 22.5 A 0.7 to 1ns 12 A 6 A 4 8 kV 30 A 0.7 to 1ns 16 A 8 A |
유사한 부품 번호 - ST3237EB_07 |
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유사한 설명 - ST3237EB_07 |
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