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STP8NM60FP 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 18 page STP8NM60, STD5NM60, STB8NM60 Electrical characteristics 3/18 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS = max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 34 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.5 A 0.9 1 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs Forward transconductance VDS = ID(on) x RDS(on)max, ID = 2.5 A 2.4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 400 100 10 pF pF pF Coss eq (1) . 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0 to 480 V 50 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 400 V, ID = 5 A VGS =10 V (see Figure 12) 13 5 6 18 nC nC nC |
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