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6N135M 데이터시트(PDF) 6 Page - Fairchild Semiconductor |
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6N135M 데이터시트(HTML) 6 Page - Fairchild Semiconductor |
6 / 13 page ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N13XM, HCPLXXXM Rev. 1.0.1 6 PRELIMINARY Electrical Characteristics (Continued) (T A = 0 to 70°C unless otherwise specified) Isolation Characteristics (TA = 0 to 70°C Unless otherwise specified) Notes: 9. Device is considered a two terminal device: Pins 1, 2, 3 and 4 are shorted together and Pins 5, 6, 7 and 8 are shorted together. 10. Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together. 11. 5,000Vrms for 1 minute duration is equivalent to 6,000Vrms for 1 second duration. Symbol Characteristics Test Conditions Min Typ** Max Unit VISO Withstand Insulation Test Voltage RH ≤ 50%, TA = 25°C, II-O ≤ 10µA, t = 1 min., f = 50Hz(9)(11) 5,000 VRMS RI-O Resistance (Input to Output) VI-O = 500VDC (9) 1011 Ω CI-O Capacitance (Input to Output) f = 1MHz, VI-O = 0V (9) 1pF HFE DC Current Gain IO = 3mA, VO = 5V (9) 150 II-I Input-Input Insulation Leakage Current RH ≤ 45%, VI-I = 500VDC (10) t = 5 s, (HCPL2530M/2531M only) 0.005 µA RI-I Input-Input Resistance VI-I = 500 VDC (10) (HCPL2530M/2531M only) 1011 Ω CI-I Input-Input Capacitance f = 1MHz(10) (HCPL2530M/2531M only) 0.03 pF |
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