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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SA1188DTZ-E 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SA1188DTZ-E 데이터시트(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page  2SA1188 Rev.3.00 Aug 10, 2005 page 4 of 6 Emitter Cutoff Current vs. Emitter to Base Voltage Emitter to Base Voltage VEB (V) 0 –2 –4 –6 –8 –10 –0.1 –1.0 –10 –100 –1,000 Ta = 75 °C 25 –25 IC = 0 Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Base to Emitter Resistance RBE (Ω) 10 100 1 k 10 k 100 k –140 –150 –160 –170 –180 –190 Typical Value IC = –1 mA DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) –1 –3 –10 –30 –100 10 30 100 300 1,000 Ta = 75 °C 25 –25 VCE = –12 V Pulse Collector to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) –1 –3 –10 –30 –100 –0.01 –0.03 –0.1 –0.3 –1.0 IC = 10 IB Pulse Ta = 75 °C 25 –25 Base to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) –1 –3 –10 –30 –100 –0.1 –0.3 –1.0 –3 –10 IC = 10 IB Pulse Ta = –25 °C 25 75 Gain Bandwidth Product vs. Collector Current 10 20 100 50 200 1,000 500 Collector Current IC (mA) –0.5 –1.0 –2 –5 –10 –20 –50 VCE = –6 V |
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