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2SK1162-E 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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2SK1162-E 데이터시트(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK1161, 2SK1162 Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics 20 20 50 Drain to Source Voltage VDS (V) Typical Output Characteristics 16 4 10 30 40 0 8 12 VGS = 4 V 6 V 10 V 7 V 5 V Pulse Test 20 410 Gate to Source Voltage VGS (V) Typical Transfer Characteristics 16 4 26 8 –25 °C 0 8 12 VDS = 20 V Pulse Test 75 °C TC = 25°C 10 820 Gate to Source Voltage VGS (V) 8 2 412 16 0 4 6 ID = 2 A Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 A Pulse Test 10 A 5 250 Drain Current ID (A) 2 0.1 1.0 5 20 0.5 0.5 1.0 Static Drain to Source on State Resistance vs. Drain Current VGS = 10 V Pulse Test 15 V 0.2 0.05 10 120 80 40 0 50 100 150 Case Temperature TC (°C) Power vs. Temperature Derating 100 0.1 10 100 1,000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 30 3 1.0 1 3 30 300 Ta = 25 °C 100 µs 1 ms PW = 10 m s (1 shot) DC O peration (T C = 25 °C ) 2SK1161 2SK1162 0.3 10 |
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