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2SK1623S 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SK1623S 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK1623(L), 2SK1623(S) Rev.3.00 Jan 10, 2006 page 4 of 7 80 120 40 0 0.04 0.08 0.12 0.16 0.20 –40 0 160 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.2 0.5 1 2 5 20 Drain Current ID (A) 10 0.5 1000 200 100 50 20 10 0.5 1 5 50 Reverse Drain Current IDR (A) 10 2 20 Body to Drain Diode Reverse Recovery Time 500 Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 10 010 20 50 Drain to Source Voltage VDS (V) 30 40 100 80 60 40 20 0 020 60 80 Gate Charge Qg (nc) 40 20 16 12 8 4 Dynamic Input Characteristics 100 0 Switching Characteristics 1000 500 200 100 20 10 0.5 1 5 50 Drain Current ID (A) 10 2 20 50 Case Temperature Tc (°C) 25°C 75°C VDS = 10 V Pulse Test di / dt = 50 A / µs VGS = 0, Ta = 25°C Pulse Test Ciss Coss Crss VGS = 0 f = 1 MHz VGS VDS ID = 20 A tf tr td(off) td(on) VDD = 25 V 50 V 80 V VDD = 80 V 50 V 25 V VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % Tc = –25°C ID = 20 A 10 V VGS = 4 V Pulse Test 5 A, 10 A 10 A 20 A 5 A |
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