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2SK2735S 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SK2735S 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2735(L), 2SK2735(S) Rev.2.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 100 80 60 40 20 –40 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 100 30 3 10 0.3 1 0.1 ID = 20 A VGS = 4 V 10 V 5, 10 A 5, 10, 20 A 25 °C Tc = –25 °C 75 °C Pulse Test VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 10000 2000 5000 1000 100 200 500 1000 300 30 100 3 10 1 di / dt = 50 A / µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz Ciss Coss Crss 1000 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) 50 40 30 20 10 0 20 16 12 8 4 8 1624 3240 0 VDD = 5 V 10 V 25 V ID = 20 A VGS VDS VDD = 25 V 10 V 5 V |
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