전자부품 데이터시트 검색엔진 |
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2SK2554-E 데이터시트(PDF) 5 Page - Renesas Technology Corp |
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2SK2554-E 데이터시트(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page 2SK2554 Rev.6.00 Sep 07, 2005 page 5 of 7 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 200 160 120 80 40 0 0.4 0.8 1.2 1.6 2.0 Pulse Test VGS = 0, –5 V 10 V 5 V 250 200 150 100 50 25 50 75 100 125 150 0 IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 PDM PW T D = PW T θch – c(t) = γs (t) • θch – c θh – c = 0.83°C/W, Tc = 25°C Tc = 25 °C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse D. U. T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin 15 V 0 ID VDS IAP V(BR)DSS L VDD EAR = • L • IAP2 • 2 1 VDSS VDSS – VDD Avalanche Test Circuit and Waveform |
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