2SK3070STL-E datasheet(4/9 Pages) RENESAS

부품명	2SK3070STL-E

상세설명	Silicon N Channel MOS FET High Speed Power Switching

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제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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4 / 9 page

2SK3070(L), 2SK3070(S)

Rev.9.00 Sep 07, 2005 page 4 of 8

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

20

16

12

8

4

–50

0

50

100

150

200

0

VGS = 10 V

4 V

Pulse Test

10, 20, 50 A

ID = 50 A

10, 20 A

0.1

0.3

1

3

10

30

100

500

100

200

20

50

10

2

5

1

0.5

Tc = –25

°C

75

°C

25

°C

VDS = 10 V

Pulse Test

0.1

0.3

1

3

10

30

100

010

20

30

40

50

1000

10000

3000

100

80

60

40

20

0

20

16

12

8

4

80

160

240

320

400

0

1000

100

200

20

10

0.1 0.2

2

10

100

1000

500

100

200

20

50

10

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

300

20

1

100

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = 75 A

VGS

VDS

VDD = 40 V

25 V

10 V

0.5

5

500

50

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty < 1 %

tr

td(on)

td(off)

tf

30000

VDD = 40 V

25 V

10 V

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