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2SD1470ATTR-E 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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2SD1470ATTR-E 데이터시트(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1470 Silicon NPN Epitaxial, Darlington REJ03G0791-0200 (Previous ADE-208-1153) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 1 2 3 1 2 3 RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) Note: Marking is “AT”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A Collector peak current iC(peak)* 1 2 A Collector power dissipation PC* 2 1 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) |
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