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STP80NF03L-04 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP80NF03L-04 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STB80NF03L-04/-1/STP80NF03L-04 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 40 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 30 270 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =24V ID =80 A VGS=4.5V 85 23 40 110 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 40 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 110 95 ns ns tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V ID = 80 A RG = 4.7Ω VGS = 4.5 V (Inductive Load, Figure 5) 125 75 125 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 75 0.15 4 ns µC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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