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2SJ352-E 데이터시트(PDF) 3 Page - Renesas Technology Corp

부품명 2SJ352-E
상세설명  Silicon P Channel MOS FET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ352-E 데이터시트(HTML) 3 Page - Renesas Technology Corp

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2SJ351, 2SJ352
Rev.2.00 Sep 07, 2005 page 3 of 5
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
–10
0
–2
–4
–6
–8
0
–10
–20
–30
–40
–50
150
0
50
100
0
50
100
150
–9
–1 V
–2
–3
–4
–5
–6
–7
–8
VGS = 0
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–5
–2
–1
–0.5
–0.2
–5
–10 –20
–50 –100 –200
–500
–20
–10
Ta = 25°C
Tc = 25°C
ID max (Continuous)
2SJ352
2SJ351
Pch
= 125
W
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
75°C
VDS = –10 V
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
–1 V
–2
–3
–4
–5
–6
–7
–8
–9
Tc = 25°C
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–0.4
–0.8
–1.2
–1.6
–2.0
Tc = –25°C
75°C
VDS = –10 V
VGS = –10 V
25°C


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