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2SJ506STL-E 데이터시트(PDF) 2 Page - Renesas Technology Corp

부품명 2SJ506STL-E
상세설명  Silicon P Channel MOS FET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–10
A
Drain peak current
ID (pulse)
Note 1
–40
A
Body to drain diode reverse drain current
IDR
–10
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–30
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
–10
µA
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
65
85
m
ID = –5 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
110
180
m
ID = –5 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
10
16
S
ID = –5 A, VDS = –10 V
Note 3
Input capacitance
Ciss
660
pF
Output capacitance
Coss
440
pF
Reverse transfer capacitance
Crss
140
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
12
ns
Rise time
tr
65
ns
Turn-off delay time
td (off)
85
ns
Fall time
tf
65
ns
VGS = –10 V
ID = –5 A
RL = 2
Body to drain diode forward voltage
VDF
–1.05
V
IF = –10 A, VGS = 0
Body to drain diode reverse recovery time
trr
65
ns
IF = –10 A, VGS = 0
diF/dt = 50 A/
µs
Note:
3. Pulse test


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