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TDA1170N 데이터시트(Datasheet) 3 Page - STMicroelectronics

부품명 TDA1170N
상세내용  LOW-NOISE TV VERTICAL DEFLECTION SYSTEM
PDF  8 Pages
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ELECTRICAL CHARACTERISTICS
(Refer to the test circuits, VS =35 V, Tamb =25
oC,unless otherwise specified)
DC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Fig.
I2
Pin 2 Quiescent Current
I3 =0
7
14
mA
1b
I5
Pin 5 Quiescent Current
I4 =0
8
17
mA
1b
–I9
Oscillator Bias Current
V9 = 1V
0.1
1
µA1a
–I10
Amplifier Input Bias Current
V10 =1V
1
10
µA1b
–I12
Ramp Generator Bias Current
V12 = 0
0.02
0.3
µA1a
–I12
Ramp Generator Current
I7 =20
µA, V12 = 0
18.5
20
21.5
µA1b
∆I12
I12
Ramp Generator Non-linearity
∆V12 = 0 to 12V, I7 =20µA
0.2
1
%
1b
Vs
Supply Voltage Range
10
35
V
V1
Pin 1 Saturation Voltage to Ground
I1 = 1mA
1
1.4
V
V3
Pin 3 Saturation Voltage to Ground
I3 = 10mA
300
450
mV
1a
V4
Qiuescent output Voltage
VS = 10V
R1 = 1k
Ω,R2= 1kΩ
4.1
4.4
4.75
V
1a
VS = 35V
R1 = 3k
Ω,R2= 1kΩ
8.3
8.8
9.45
V
1a
V4L
Output Saturation Voltage to Ground
– I4 = 0.1A
–I4 = 0.8A
0.9
1.9
1.2
2.3
V
V
1c
1c
V4H
Output Saturation Voltage to Supply
I4 = 0.1A
I4 = 0.8A
1.4
2.8
2.1
3.2
V
V
1d
1d
V6
Regulated Voltage at Pin 6
6.1
6.5
6.9
V
1b
V7
Regulated Voltage at Pin 7
I7 =20
µA
6.2
6.6
7
V
1b
|
∆V6|
VS
;
∆V7
∆VS
Regulated Voltage Drift with Supply
Voltage
∆VS = 10 to 35V
1
mV/V
1b
V10
Amplifier Input Reference Voltage
2.07
2.2
2.3
V
R8
Pin 8 Input Resistance
V8
≤ 0.4V
1
M
1a
TDA1170N
3/8




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