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IRF634NSPBF 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRF634NSPBF 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91033 www.vishay.com S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF634NL/SiHF634NL) is available for low-profile application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω)VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S TO-220 G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF634NPbF IRF634NSPbF IRF634NSTRLPbFa IRF634NSTRRPbFa IRF634NLPbF SiHF634N-E3 SiHF634NS-E3 SiHF634NSTL-E3a SiHF634NSTR-E3a SiHF634NL-E3 SnPb IRF634N IRF634NS IRF634NSTRLa IRF634NSTRRa - SiHF634N SiHF634NS SiHF634NSTLa SiHF634NSTRa - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 A TC = 100 °C 5.6 Pulsed Drain Currenta IDM 32 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb EAS 110 mJ Avalanche Currenta IAR 4.8 A Repetiitive Avalanche Energya EAR 8.8 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply |
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