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IRF9620 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRF9620 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 91082 www.vishay.com S-81272-Rev. A, 16-Jun-08 1 Power MOSFET IRF9620, SiHF9620 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • P-Channel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD ≤ - 3.5 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. c. 1.6 mm from case. PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω)VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S G D P-Channel MOSFET TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRF9620PbF SiHF9620-E3 SnPb IRF9620 SiHF9620 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 3.5 A TC = 100 °C - 2.0 Pulsed Drain Currenta IDM - 14 Linear Derating Factor 0.32 W/°C Maximum Power Dissipation TC = 25 °C PD 40 W Peak Diode Recovery dV/dtb dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300c Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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