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IRFBE30L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFBE30L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91119 www.vishay.com S-81432-Rev. A, 07-Jul-08 1 Power MOSFET IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, RG = 25 Ω, IAS = 4.1 A (see fig. 12). c. ISD ≤ 4.1 A, dI/dt ≤ 100 A/µs, VDD ≤ 600 V, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 800 RDS(on) (Ω)VGS = 10 V 3.0 Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFBE30SPbF IRFBE30STRLPbFa IRFBE30LPbF SiHFBE30S-E3 SiHFBE30STL-E3a SiHFBE30L-E3 SnPb IRFBE30S - - SiHFBE30S - - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 4.1 A TC = 100 °C 2.6 Pulsed Drain Currenta IDM 16 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 260 mJ Avalanche Currenta IAR 4.1 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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