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IRFP21N60LPBF 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP21N60LPBF 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91206 www.vishay.com S-81273-Rev. B, 16-Jun-08 1 Power MOSFET IRFP21N60L, SiHFP21N60L Vishay Siliconix FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uniterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a). c. ISD ≤ 21 A, dI/dt ≤ 530 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP21N60LPbF SiHFP21N60L-E3 SnPb IRFP21N60L SiHFP21N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 21 A TC = 100 °C 13 Pulsed Drain Currenta IDM 84 Linear Derating Factor 2.6 W/°C Single Pulse Avalanche Energyb EAS 420 mJ Repetitive Avalanche Currenta IAR 21 A Repetitive Avalanche Energya EAR 33 mJ Maximum Power Dissipation TC = 25 °C PD 330 W Peak Diode Recovery dV/dtc dV/dt 16 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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