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IRFP22N60K 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP22N60K 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91208 www.vishay.com S-81274-Rev. A, 16-Jun-08 1 Power MOSFET IRFP22N60K, SiHFP22N60K Vishay Siliconix FEATURES • Hard Switching Primary or PFS Switch • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability • Lead (Pb)-free Available BENEFITS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Motor Drive Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 22 A (see fig. 12). c. ISD ≤ 22 A, dI/dt ≤ 360 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP22N60KPbF SiHFP22N60K-E3 SnPb IRFP22N60K SiHFP22N60K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 22 A TC = 100 °C 14 Pulsed Drain Currenta IDM 88 Linear Derating Factor 2.9 W/°C Single Pulse Avalanche Energyb EAS 380 mJ Repetitive Avalanche Currenta IAR 22 A Repetitive Avalanche Energya EAR 37 mJ Maximum Power Dissipation TC = 25 °C PD 370 W Peak Diode Recovery dV/dtc dV/dt 15 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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