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IRFP31N50L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP31N50L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91220 www.vishay.com S-81274-Rev. A, 16-Jun-08 1 Power MOSFET IRFP31N50L, SiHFP31N50L Vishay Siliconix FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1 mH, RG = 25 Ω, IAS = 31 A (see fig. 12). c. ISD ≤ 31 A, dI/dt ≤ 422 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.15 Qg (Max.) (nC) 210 Qgs (nC) 58 Qgd (nC) 100 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP31N50LPbF SiHFP31N50L-E3 SnPb IRFP31N50L SiHFP31N50L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 31 A TC = 100 °C 20 Pulsed Drain Currenta IDM 124 Linear Derating Factor 3.7 W/°C Single Pulse Avalanche Energyb EAS 460 mJ Repetitive Avalanche Currenta IAR 31 A Repetitive Avalanche Energya EAR 46 mJ Maximum Power Dissipation TC = 25 °C PD 460 W Peak Diode Recovery dV/dtc dV/dt 19 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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