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IRFP31N50L 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFP31N50L 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91220 2 S-81274-Rev. A, 16-Jun-08 IRFP31N50L, SiHFP31N50L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.26 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.28 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 19 Ab -0.15 0.18 Ω Forward Transconductance gfs VDS = 50 V, ID = 19 Ab 15 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 5000 - pF Output Capacitance Coss - 553 - Reverse Transfer Capacitance Crss -59 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 6630 - VDS = 400 V , f = 1.0 MHz - 155 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 276 - Effective Output Capacitance Coss eff. (ER) - 200 - Total Gate Charge Qg VGS = 10 V ID = 31 A, VDS = 400 V, see fig. 7 and 13b - - 210 nC Gate-Source Charge Qgs -- 58 Gate-Drain Charge Qgd - - 100 Internal Gate Resistance rG f = 1 MHz, open drain - 1.1 - Ω Turn-On Delay Time td(on) VDD = 250 V, ID = 31 A, RG = 4.3 Ω, see fig. 10b -28 - ns Rise Time tr - 115 - Turn-Off Delay Time td(off) -54 - Fall Time tf -53 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 31 A Pulsed Diode Forward Currenta ISM - - 124 Body Diode Voltage VSD TJ = 25 °C, IS = 31 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 31 A - 170 250 ns TJ = 125 °C, dI/dt = 100 A/µsb - 220 330 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IS = 31 A, VGS = 0 Vb - 570 860 nC TJ = 125 °C, dI/dt = 100 A/µsb -1.2 1.8 µC Reverse Recovery Current IRRM TJ = 25 °C - 7.9 12 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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