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IRFP32N50KPBF 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP32N50KPBF 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91221 www.vishay.com S-81361-Rev. B, 07-Jul-08 1 Power MOSFET IRFP32N50K, SiHFP32N50K Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current •Low RDS(on) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Hard Switching and High Frequency Circuits Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 0.87 mH, RG = 25 Ω, IAS = 32 A. c. ISD ≤ 32 A, dI/dt ≤ 197 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.135 Qg (Max.) (nC) 190 Qgs (nC) 59 Qgd (nC) 84 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP32N50KPbF SiHFP32N50K-E3 SnPb IRFP32N50K SiHFP32N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 32 A TC = 100 °C 20 Pulsed Drain Currenta IDM 130 Linear Derating Factor 3.7 W/°C Single Pulse Avalanche Energyb EAS 450 mJ Repetitive Avalanche Currenta IAR 32 A Repetitive Avalanche Energya EAR 46 mJ Maximum Power Dissipation TC = 25 °C PD 460 W Peak Diode Recovery dV/dtc dV/dt 13 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may applyrom case. |
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