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IRFP064 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP064 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91201 www.vishay.com S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFP064, SiHFP064 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Ultra Low On- Resistance • Very Low Thermal Resistance • Isolated Central Mounting Hole • 175 °C Operating Temperature • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 69 µH, RG = 25 Ω, IAS = 130 A (see fig. 12). c. ISD ≤ 130 A, dI/dt ≤ 300 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Current limited by the package (die current = 130 A). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP064PbF SiHFP064-E3 SnPb IRFP064 SiHFP064 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 70 A TC = 100 °C 70 Pulsed Drain Currenta IDM 520 Linear Derating Factor 2.0 W/°C Single Pulse Avalanche Energyb EAS 1000 mJ Repetitive Avalanche Currenta IAR 70 A Repetitive Avalanche Energya EAR 30 mJ Maximum Power Dissipation TC = 25 °C PD 300 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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