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IRFP254NPBF 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 IRFP254NPBF
상세설명  Power MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFP254NPBF 데이터시트(HTML) 1 Page - Vishay Siliconix

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Document Number: 91213
www.vishay.com
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFP254N, SiHFP254N
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
these Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V.
c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)VGS = 10 V
0.125
Qg (Max.) (nC)
100
Qgs (nC)
17
Qgd (nC)
44
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-247
Lead (Pb)-free
IRFP254NPbF
SiHFP254N-E3
SnPb
IRFP254N
SiHFP254N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
23
A
TC = 100 °C
16
Pulsed Drain Currenta
IDM
92
Linear Derating Factor
1.5
W/°C
Single Pulse Avalanche Energyb
EAS
300
mJ
Repetitive Avalanche Currenta
IAR
14
A
Repetitive Avalanche Energya
EAR
22
mJ
Maximum Power Dissipation
TC = 25 °C
PD
220
W
Peak Diode Recovery dV/dtc
dV/dt
7.4
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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