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IRFP254NPBF 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP254NPBF 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91213 www.vishay.com S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFP254N, SiHFP254N Vishay Siliconix FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fully Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V. c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω)VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP254NPbF SiHFP254N-E3 SnPb IRFP254N SiHFP254N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 23 A TC = 100 °C 16 Pulsed Drain Currenta IDM 92 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 300 mJ Repetitive Avalanche Currenta IAR 14 A Repetitive Avalanche Energya EAR 22 mJ Maximum Power Dissipation TC = 25 °C PD 220 W Peak Diode Recovery dV/dtc dV/dt 7.4 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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