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IRFP264N 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP264N 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91216 www.vishay.com S-81274-Rev. A, 16-Jun-08 1 Power MOSFET IRFP264N, SiHFP264N Vishay Siliconix FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer with an ectremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 25 A, VGS = 10 V (see fig. 12). c. ISD ≤ 25 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω)VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP264NPbF SiHFP264N-E3 SnPb IRFP264N SiHFP264N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 44 A TC = 100 °C 31 Pulsed Drain Currenta IDM 170 Linear Derating Factor 2.6 W/°C Single Pulse Avalanche Energyb EAS 520 mJ Repetitive Avalanche Currenta IAR 25 A Repetitive Avalanche Energya EAR 38 mJ Maximum Power Dissipation TC = 25 °C PD 380 W Peak Diode Recovery dV/dtc dV/dt 8.7 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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