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IRFP450N 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFP450N 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFP450N, SiHFP450N Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge and Full Bridge • PFC Boost Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Max.) (Ω)VGS = 10 V 0.37 Qg (Max.) (nC) 77 Qgs (nC) 26 Qgd (nC) 34 Configuration Single N-Channel MOSFET G D S TO-247 G D S RoHS COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP450NPbF SiHFP450N-E3 SnPb IRFP450N SiHFP450N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 A TC = 100 °C 8.8 Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.6 W/°C Single Pulse Avalanche Energyb EAS 170 mJ Repetitive Avalanche Currenta IAR 14 A Repetitive Avalanche Energya EAR 20 mJ Maximum Power Dissipation TC = 25 °C PD 200 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m |
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