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IRFPS29N60L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFPS29N60L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91255 www.vishay.com S-81359-Rev. A, 07-Jul-08 1 Power MOSFET IRFPS29N60L, SiHFPS29N60L Vishay Siliconix FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhances dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offer Improved Noise Immunity • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 29 A (see fig.12a). c. ISD ≤ 29 A, dI/dt ≤ 830 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration Single G D S SUPER-247TM N-Channel MOSFET G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package SUPER-247TM Lead (Pb)-free IRFPS29N60LPbF SiHFPS29N60L-E3 SnPb IRFPS29N60L SiHFPS29N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 29 A TC = 100 °C 18 Pulsed Drain Currenta IDM 110 Linear Derating Factor 3.8 W/°C Single Pulse Avalanche Energyb EAS 570 mJ Repetitive Avalanche Currenta IAR 29 A Repetitive Avalanche Energya EAR 48 mJ Maximum Power Dissipation TC = 25 °C PD 480 W Peak Diode Recovery dV/dtc dV/dt 15 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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