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IRFPS29N60L 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 IRFPS29N60L
상세설명  Power MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 91255
2
S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Note
a. Rth is measured at TJ approximately 90 °C.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambienta
RthJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)a
RthJC
-0.26
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
600
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.53
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
50
µA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
2.0
mA
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 17 Ab
-
0.175
0.21
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 17 Ab
15
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5b
-
6160
-
pF
Output Capacitance
Coss
-
530
-
Reverse Transfer Capacitance
Crss
-44
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 480 Vc
-
250
-
Effective Output Capacitance
(Energy Related)
Coss eff. (ER)
-
190
-
Total Gate Charge
Qg
VGS = 10 V
ID = 29 A, VDS = 480 V,
see fig. 7 and 15b
-
-
220
nC
Gate-Source Charge
Qgs
--
67
Gate-Drain Charge
Qgd
--
96
Internal Gate Resistance
RG
f = 1 MHz, open drain
-
0.86
-
Ω
Turn-On Delay Time
td(on)
VDD =300 V, ID = 29 A,
RG = 4.3 Ω, VGS = 10 V,
see fig. 11a and 11bb
-34
-
ns
Rise Time
tr
-
100
-
Turn-Off Delay Time
td(off)
-66
-
Fall Time
tf
-54
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
29
A
Pulsed Diode Forward Currenta
ISM
-
-
110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 29 A, VGS = 0 Vb
--
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 29 A
TJ = 125 °C, dI/dt = 100 A/µsb
-
130
190
ns
-
240
360
Body Diode Reverse Recovery Charge
Qrr
-
630
950
µC
-
1820
2720
Body Diode Recovery Current
IRRM
TJ = 25 °C
-
9.4
14
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominatred by LS and LD)
S
D
G


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