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IRFPS35N50L 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 IRFPS35N50L
상세설명  IRFPS35N50L
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 91257
www.vishay.com
S-81368-Rev. A, 21-Jul-08
1
Power MOSFET
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.97 mH, RG = 25 Ω, IAS = 34 A (see fig. 12).
c. ISD ≤ 34 A, dI/dt ≤ 765 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)VGS = 10 V
0.125
Qg (Max.) (nC)
230
Qgs (nC)
65
Qgd (nC)
110
Configuration
Single
G
D
S
SUPER-247TM
N-Channel MOSFET
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
SUPER-247TM
Lead (Pb)-free
IRFPS35N50LPbF
SiHFPS35N50L-E3
SnPb
IRFPS35N50L
SiHFPS35N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
34
A
TC = 100 °C
22
Pulsed Drain Currenta
IDM
140
Linear Derating Factor
3.6
W/°C
Single Pulse Avalanche Energyb
EAS
560
mJ
Repetitive Avalanche Currenta
IAR
34
A
Repetitive Avalanche Energya
EAR
45
mJ
Maximum Power Dissipation
TC = 25 °C
PD
450
W
Peak Diode Recovery dV/dtc
dV/dt
15
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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