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IRFPS35N50L 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 IRFPS35N50L
상세설명  IRFPS35N50L
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Document Number: 91257
2
S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Note
a. Rth is measured at TJ approximately 90 °C.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 400 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-0.28
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-0.12
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
--
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
--
50
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
--
2.0
mA
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 20 Ab
-
0.125
0.145
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 20 Ab
18
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
5580
-
pF
Output Capacitance
Coss
-
590
-
Reverse Transfer Capacitance
Crss
-58
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
-
7290
-
VDS = 400 V , f = 1.0 MHz
-
160
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 400 Vc
-
320
-
Effective Output Capacitance (Energy
Related)
Coss eff. (ER)
-
220
-
Total Gate Charge
Qg
VGS = 10 V
ID = 34 A, VDS = 400 V,
see fig. 7 and 13b
--
230
nC
Gate-Source Charge
Qgs
--
65
Gate-Drain Charge
Qgd
--
110
Internal Gate Resistance
RG
f = 1 MHz, open drain
-
1.1
-
Ω
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 34 A,
RG = 1.2 Ω, see fig. 10b
-24
-
ns
Rise Time
tr
-
100
-
Turn-Off Delay Time
td(off)
-42
-
Fall Time
tf
-42
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
34
A
Pulsed Diode Forward Currenta
ISM
-
-
140
Body Diode Voltage
VSD
TJ = 25 °C, IS = 34 A, VGS = 0 Vb
--
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 34 A
-
170
250
ns
TJ = 125 °C, dI/dt = 100 A/µsb
-
220
330
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 34 A, VGS = 0 Vb
-
670
1010
µC
TJ = 125 °C, dI/dt = 100 A/µsb
-
1500
2200
Reverse Recovery Current
IRRM
TJ = 25 °C
-
8.5
-
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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