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IRFPS37N50A 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFPS37N50A 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91258 www.vishay.com S-81368-Rev. B, 21-Jul-08 1 Power MOSFET IRFPS37N50A, SiHFPS37N50A Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Full Bridge Converters • Power Factor Correction Boost Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, RG = 25 Ω, IAS = 36 A (see fig. 12). c. ISD ≤ 36 A, dI/dt ≤ 145 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Max.) (Ω)VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) 71 Configuration Single N-Channel MOSFET G D S S D G SUPER-247TM Available RoHS* COMPLIANT ORDERING INFORMATION Package SUPER-247TM Lead (Pb)-free IRFPS37N50APbF SiHFPS37N50A-E3 SnPb IRFPS37N50A SiHFPS37N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 36 A TC = 100 °C 23 Pulsed Drain Currenta IDM 144 Linear Derating Factor 3.6 W/°C Single Pulse Avalanche Energyb EAS 1260 mJ Repetitive Avalanche Currenta IAR 36 A Repetitive Avalanche Energya EAR 44 mJ Maximum Power Dissipation TC = 25 °C PD 446 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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