전자부품 데이터시트 검색엔진 |
|
IRFPS37N50APBF 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
IRFPS37N50APBF 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91258 2 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.28 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 22 Ab - - 0.13 Ω Forward Transconductance gfs VDS = 50 V, ID = 22 Ab 20 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 5579 - pF Output Capacitance Coss - 810 - Reverse Transfer Capacitance Crss -36 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 7905 - VDS = 400 V , f = 1.0 MHz - 221 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 V - 400 - Total Gate Charge Qg VGS = 10 V ID = 36 A, VDS = 400 V, see fig. 6 and 13b - - 180 nC Gate-Source Charge Qgs -- 46 Gate-Drain Charge Qgd -- 71 Turn-On Delay Time td(on) VDD = 250 V, ID = 36 A, RG = 2.15 Ω, RD = 7.0 Ω, see fig. 10b -23 - ns Rise Time tr -98 - Turn-Off Delay Time td(off) -52 - Fall Time tf -80 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 36 A Pulsed Diode Forward Currenta ISM - - 144 Body Diode Voltage VSD TJ = 25 °C, IS = 36 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 36 A, dI/dt = 100 A/µsb - 570 860 ns Body Diode Reverse Recovery Charge Qrr -8.6 13 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
유사한 부품 번호 - IRFPS37N50APBF |
|
유사한 설명 - IRFPS37N50APBF |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |