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IRFPS43N50K 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFPS43N50K 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91262 www.vishay.com S-81367-Rev. B, 21-Jul-08 1 Power MOSFET IRFPS43N50K, SiHFPS43N50K Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current •Low RDS(on) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High Frequency Circuits Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.82 mH, RG = 25 Ω, IAS = 47 A (see fig. 12c). c. ISD ≤ 47 A, dI/dt ≤ 230 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) 180 Configuration Single N-Channel MOSFET G D S G D S SUPER-247TM Available RoHS* COMPLIANT ORDERING INFORMATION Package SUPER-247TM Lead (Pb)-free IRFPS43N50KPbF SiHFPS43N50K-E3 SnPb IRFPS43N50K SiHFPS43N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 47 A TC = 100 °C 29 Pulsed Drain Currenta IDM 190 Linear Derating Factor 4.3 W/°C Single Pulse Avalanche Energyb EAS 910 mJ Repetitive Avalanche Currenta IAR 47 A Repetitive Avalanche Energya EAR 54 mJ Maximum Power Dissipation TC = 25 °C PD 540 W Peak Diode Recovery dV/dtc dV/dt 9.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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