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IRFPS43N50K 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 IRFPS43N50K
상세설명  RFPS43N50K
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 91262
www.vishay.com
S-81367-Rev. B, 21-Jul-08
1
Power MOSFET
IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
•Low RDS(on)
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.82 mH, RG = 25 Ω, IAS = 47 A (see fig. 12c).
c. ISD ≤ 47 A, dI/dt ≤ 230 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)VGS = 10 V
0.078
Qg (Max.) (nC)
350
Qgs (nC)
85
Qgd (nC)
180
Configuration
Single
N-Channel MOSFET
G
D
S
G
D
S
SUPER-247TM
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
SUPER-247TM
Lead (Pb)-free
IRFPS43N50KPbF
SiHFPS43N50K-E3
SnPb
IRFPS43N50K
SiHFPS43N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
47
A
TC = 100 °C
29
Pulsed Drain Currenta
IDM
190
Linear Derating Factor
4.3
W/°C
Single Pulse Avalanche Energyb
EAS
910
mJ
Repetitive Avalanche Currenta
IAR
47
A
Repetitive Avalanche Energya
EAR
54
mJ
Maximum Power Dissipation
TC = 25 °C
PD
540
W
Peak Diode Recovery dV/dtc
dV/dt
9.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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