BAT43W-V-GS08 datasheet(2/5 Pages) VISHAY

부품명	BAT43W-V-GS08

상세설명	Small Signal Schottky Diodes

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Document Number 85661

Rev. 1.5, 27-Feb-07

BAT42W-V/BAT43W-V

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

1) Pulse test t

p < 300 µs, tp/T < 0.02

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

3001)

K/W

Junction temperature

Tj

125

°C

Ambient operating temperature range

Tamb

- 55 to + 125

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR = 100 µA (pulsed)

V(BR)

30

V

Leakage current1)

VR = 25 V

IR

0.5

µA

VR = 25 V, Tj = 100 °C

IR

100

µA

Forward voltage1)

IF = 200 mA

VF

1000

mV

IF = 10 mA

BAT42W-V

VF

400

mV

IF = 50 mA

BAT42W-V

VF

650

mV

IF = 2 mA

BAT43W-V

VF

260

330

mV

IF = 15 mA

BAT43W-V

VF

450

mV

Diode capacitance

VR = 1 V, f = 1 MHz

CD

7pF

Reverse recovery time

IF = 10 mA, IR = 10 mA,

iR = 1 mA, RL = 100 Ω

trr

5ns

Rectification efficieny

RL = 15 kΩ, CL = 300 pF,

f = 45 MHz, VRF = 2 V

η

v

80

%

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

200

18442

Tamb - Ambient Temperature (°C)

250

200

150

100

50

100

150

0

Figure 2. Typical Reverse Characteristics

18443

1200

1000

800

600

400

200

0

1000

100

10

1

0.1

0.01

VF - Instantaneous Forward Voltage (mV)

25 °C

125 °C

- 40 °C

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