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V60120C 데이터시트(PDF) 1 Page - Vishay Siliconix |
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V60120C 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product V60120C Vishay General Semiconductor Document Number: 88976 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 120 V IFSM 300 A VF at IF = 30 A 0.71 V TJ max. 150 °C TO-220AB 1 2 3 PIN 1 PIN 2 CASE PIN 3 TMBS ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60120C UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (Fig. 1) per device per diode IF(AV) 60 30 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 300 Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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